參數(shù)資料
型號: AT93C86-10TC-2.7
英文描述: Microwire Serial EEPROM
中文描述: 微型導線串行EEPROM
文件頁數(shù): 6/15頁
文件大?。?/td> 217K
代理商: AT93C86-10TC-2.7
6
AT93C46/56/66
3264A
SEEPR
01/02
Functional
Description
The AT93C46/56/66 is accessed via a simple and versatile 3-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro-
cessor.
A valid instruction starts with a rising edge of CS
and consists of a Start Bit
(logic
1
) followed by the appropriate Op Code and the desired memory Address
location.
READ (READ):
The Read (READ) instruction contains the Address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic
0
) precedes the 8- or 16-bit data output string.
ERASE/WRITE (EWEN):
To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable
(EWEN) instruction must be executed first before any programming instructions can be
carried out. Please note that once in the Erase/Write Enable state, programming
remains enabled until an Erase/Write Disable (EWDS) instruction is executed or V
CC
power is removed from the part.
ERASE (ERASE):
The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical
1
state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS
).
A logic
1
at pin DO indicates that the selected memory location has been erased, and
the part is ready for another instruction.
WRITE (WRITE):
The Write (WRITE) instruction contains the 8 or 16 bits of data to be
written into the specified memory location. The self-timed programming cycle, t
WP
, starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t
CS
). A logic
0
at DO indicates that programming is still in progress. A logic
1
indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions.
A
READY/BUSY status cannot be obtained if the CS is brought high after the end of
the self-timed programming cycle, t
WP
.
ERASE ALL (ERAL):
The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic
1
state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is brought high after being kept low for
a minimum of 250 ns (t
CS
). The ERAL instruction is valid only at V
CC
= 5.0V
±
10%.
WRITE ALL (WRAL)
: The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS
).
The WRAL instruction is valid only at V
CC
= 5.0V ±
10%.
ERASE/WRITE DISABLE (EWDS):
To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the READ instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
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