參數(shù)資料
型號: AT45DB011D-SU
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 1-megabit 2.7-volt DataFlash
中文描述: 1M X 1 FLASH 2.7V PROM, PDSO8
封裝: 0.209 INCH, GREEN, PLASTIC, EIAJ, SOIC-8
文件頁數(shù): 32/52頁
文件大?。?/td> 1107K
代理商: AT45DB011D-SU
32
3639B–DFLASH–02/07
AT45DB011D [Preliminary]
16. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the device
will default to Mode 3. In addition, the output pin (SO) will be in a high impedance state, and a
high-to-low transition on the CS pin will be required to start a valid instruction. The mode (Mode
3 or Mode 0) will be automatically selected on every falling edge of CS by sampling the inactive
clock state.
16.1
Initial Power-up/Reset Timing Restrictions
At power up, the device must not be selected until the supply voltage reaches the V
CC
(min.) and
further delay of t
VCSL
. During power-up, the internal Power-on Reset circuitry keeps the device in
reset mode until the V
CC
rises above the Power-on Reset threshold value (V
POR
). At this time, all
operations are disabled and the device does not respond to any commands. After power up is
applied and the V
CC
is at the minimum operating voltage V
CC
(min.), the t
VCSL
delay is required
before the device can be selected in order to perform a read operation.
Similarly, the t
PUW
delay is required after the V
CC
rises above the Power-on Reset threshold
value (V
POR
) before the device can perform a write (Program or Erase) operation. After initial
power-up, the device will default in Standby mode.
17. System Considerations
The RapidS serial interface is controlled by the clock SCK, serial input SI and chip select CS
pins. These signals must rise and fall monotonically and be free from noise. Excessive noise or
ringing on these pins can be misinterpreted as multiple edges and cause improper operation of
the device. The PC board traces must be kept to a minimum distance or appropriately termi-
nated to ensure proper operation. If necessary, decoupling capacitors can be added on these
pins to provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A
key element of any voltage regulation scheme is its current sourcing capability. Like all Flash
memories, the peak current for DataFlash occur during the programming and erase operation.
The regulator needs to supply this peak current requirement. An under specified regulator can
cause current starvation. Besides increasing system noise, current starvation during program-
ming or erase can lead to improper operation and possible data corruption.
Symbol
Parameter
Min
Typ
Max
Units
t
VCSL
V
CC
(min.) to Chip Select low
50
μs
t
PUW
Power-Up Device Delay before Write Allowed
20
ms
V
POR
Power-On Reset Voltage
1.5
2.5
V
相關(guān)PDF資料
PDF描述
AT45DB011 1-megabit 2.7-volt Only Serial DataFlash(1M位 2.7V串行數(shù)據(jù)閃速存儲器)
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