- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364725 > AT41586 Low Cost General Purpose Transistors PDF資料下載
參數(shù)資料
| 型號： | AT41586 |
| 英文描述： | Low Cost General Purpose Transistors |
| 中文描述： | 低成本通用晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | AT41586 |
Low Cost General Purpose
Transistors
Technical Data
Features
Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
Low Cost Surface Mount
Package
Tape and Reel Option
Available
AT-41586
Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
V
CE
= 8 V, I
C
= 10 mA.
FREQUENCY (GHz)
4.0
1.0
6
0
24
21
3
15
18
0.5
12
9
3.0
2.0
2
4
0
G
A
O
N
G
A
O
NF
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
86 Plastic Package
Description
Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
in the 1 to 2 GHz
frequency range, makes this
device easy to use as a low noise
amplifier.
The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Pin Connections
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT52BR1662A | 16M 2.7V 2MSRAM Single Bank Bottom Stacked Modules |
| AT52BR1662AT | 16M 2.7V 2MSRAM Single Bank Top Stacked Modules |
| AT52BR1662T-70CI | Metal Film Resistor - RN 1/4 T1 2.2K 5% A |
| AT52BR1662T-90CI | MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|66PIN|PLASTIC |
| AT52BR1664T-70CI | MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|66PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41586 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Cost General Purpose Transistors |
| AT-41586-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Cost General Purpose Transistors |
| AT-41586-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41586-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Cost General Purpose Transistors |
| AT-41586-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。