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參數(shù)資料
| 型號： | AT29C010A-15TC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| 中文描述： | 128K X 8 FLASH 5V PROM, 150 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 727K |
| 代理商： | AT29C010A-15TC |
(continued)
tion of the device. Reading data out of the device is similar
to reading from an EPROM. Reprogramming the
AT29C010A is performed on a sector basis; 128-bytes of
data are loaded into the device and then simultaneously
programmed.
During a reprogram cycle, the address locations and 128-
bytes of data are internally latched, freeing the address
Block Diagram
and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the
sector and then program the latched data using an internal
control timer. The end of a program cycle can be detected
by DATA polling of I/O7. Once the end of a program cycle
has been detected, a new access for a read or program
can begin.
Description
(Continued)
Device Operation
READ:
The AT29C010A is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-
line control gives designers flexibility in preventing bus
contention.
BYTE LOAD:
Byte loads are used to enter the 128-
bytes of a sector to be programmed or the software codes
for data protection. A byte load is performed by applying a
low pulse on the WE or CE input with CE or WE low (re-
spectively) and OE high. The address is latched on the
falling edge of CE or WE, whichever occurs last. The data
is latched by the first rising edge of CE or WE.
PROGRAM:
The device is reprogrammed on a sector
basis. If a byte of data within a sector is to be changed,
data for the entire sector must be loaded into the device.
The data in any byte that is not loaded during the program-
ming of its sector will be indeterminate. Once the bytes of
a sector are loaded into the device, they are simultane-
ously programmed during the internal programming pe-
riod. After the first data byte has been loaded into the de-
vice, successive bytes are entered in the same manner.
Each new byte to be programmed must have its high to
low transition on WE (or CE) within 150
μ
s of the low to
high transition of WE (or CE) of the preceding byte. If a
high to low transition is not detected within 150
μ
s of the
last low to high transition, the load period will end and the
internal programming period will start. A7 to A16 specify
the sector address. The sector address must be valid dur-
ing each high to low transition of WE (or CE). A0 to A6
specify the byte address within the sector. The bytes may
be loaded in any order; sequential loading is not required.
Once a programming operation has been initiated, and for
the duration of t
WC
, a read operation will effectively be a
polling operation.
SOFTWARE DATA PROTECTION:
A software control-
led data protection feature is available on the AT29C010A.
Once the software protection is enabled a software algo-
rithm must be issued to the device before a program may
be performed. The software protection feature may be en-
abled or disabled by the user; when shipped from Atmel,
the software data protection feature is disabled. To enable
the software data protection, a series of three program
commands to specific addresses with specific data must
be performed. After the software data protection is en-
abled the same three program commands must begin
each program cycle in order for the programs to occur. All
software program commands must obey the sector pro-
gram timing specifications. Once set, the software data
protection feature remains active unless its disable com-
mand is issued. Power transitions will not reset the soft-
ware data protection feature, however the software fea-
ture will guard against inadvertent program cycles during
power transitions.
Once set, software data protection will remain active un-
less the disable command sequence is issued.
After setting SDP, any attempt to write to the device with-
out the 3-byte command sequence will start the internal
write timers. No data will be written to the device; however,
for the duration of t
WC
, a read operation will effectively be
a polling operation.
4-130
AT29C010A
相關PDF資料 |
PDF描述 |
|---|---|
| AT29C010A-15TI | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| AT29C010A-70 | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| AT29C010A-70JC | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| AT29C010A-70PC | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| AT29C010A-70TC | 1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C010A-15TI | 功能描述:閃存 1M (128kx8) NRND RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29C010A-20PC | 功能描述:IC FLASH 1MBIT 200NS 32DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應商設備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT29C010A-70 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
| AT29C010A-70JC | 功能描述:閃存 1M(128Kx8) 5V ONLY 70NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29C010A-70JI | 功能描述:閃存 1M(128Kx8) 5V ONLY- 70NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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