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參數(shù)資料
| 型號： | AT29BV020-35TI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 350 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 489K |
| 代理商： | AT29BV020-35TI |
To allow for simple in-system reprogrammability, the
AT29BV020 does not require high input voltages for pro-
gramming. The device can be operated with a single 2.7V
to 3.6V supply. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the
AT29BV020 is performed on a sector basis; 256-bytes of
data are loaded into the device and then simultaneously
programmed.
During a reprogram cycle, the address locations and 256-
bytes of data are captured at microprocessor speed and
internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cy-
cle, the device will automatically erase the sector and then
program the latched data using an internal control timer.
The end of a program cycle can be detected by DATA poll-
ing of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
Description
(Continued)
Device Operation
READ:
The AT29BV020 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-
line control gives designers flexibility in preventing bus
contention.
SOFTWARE DATA PROTECTION PROGRAMMING:
The AT29BV020 has 1024 individual sectors, each 256-
bytes. Using the software data protection feature, byte
loads are used to enter the 256-bytes of a sector to be
programmed. The AT29BV020 can only be programmed
or reprogrammed using the software data protection fea-
ture. The device is programmed on a sector basis. If a byte
of data within the sector is to be changed, data for the en-
tire 256-byte sector must be loaded into the device. The
data in any byte that is not loaded during the programming
of its sector will be indeterminate. The AT29BV020 auto-
matically does a sector erase prior to loading the data into
the sector. An erase command is not required.
Software data protection protects the device from inadver-
tent programming. A series of three program commands
to specific addresses with specific data must be presented
to the device before programming may occur. The same
three program commands must begin each program op-
eration. All software program commands must obey the
sector program timing specifications. Power transitions
(continued)
Block Diagram
will not reset the software data protection feature, however
the software feature will guard against inadvertent pro-
gram cycles during power transitions.
Any attempt to write to the device without the 3-byte com-
mand sequence will start the internal write timers. No data
will be written to the device; however, for the duration of
t
WC
, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code
is given, a byte load is performed by applying a low pulse
on the WE or CE input with CE or WE low (respectively)
and OE high. The address is latched on the falling edge of
CE or WE, whichever occurs last. The data is latched by
the first rising edge of CE or WE.
The 256-bytes of data must be loaded into each sector.
Any byte that is not loaded during the programming of its
sector will be indeterminate. Once the bytes of a sector
are loaded into the device, they are simultaneously pro-
grammed during the internal programming period. After
the first data byte has been loaded into the device, suc-
cessive bytes are entered in the same manner. Each new
byte to be programmed must have its high to low transition
on WE (or CE) within 150
μ
s of the low to high transition of
WE (or CE) of the preceding byte. If a high to low transition
is not detected within 150
μ
s of the last low to high transi-
tion, the load period will end and the internal programming
period will start. A8 to A17 specify the sector address. The
4-14
AT29BV020
相關PDF資料 |
PDF描述 |
|---|---|
| AT29BV020-25 | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV020-25JC | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV020-25JI | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV020-25TC | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
| AT29BV020-25TI | 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT29BV040A | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT29BV040A_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT29BV040A-20CC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|BGA|32PIN|PLASTIC |
| AT29BV040A-20CI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|BGA|32PIN|PLASTIC |
| AT29BV040A-20JU | 功能描述:閃存 4M(512Kx8) 2.7V - 250NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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