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參數(shù)資料
| 型號(hào)： | AT28HC256E-12PI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 256 32K x 8 High Speed Parallel EEPROMs |
| 中文描述： | 32K X 8 EEPROM 5V, 120 ns, PDIP28 |
| 封裝： | 0.600 INCH, PLASTIC, MS-001AB, DIP-28 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 445K |
| 代理商： | AT28HC256E-12PI |
1
Features
Fast Read Access Time - 70 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-Byte Page Write Operation
Low Power Dissipation
– 80 mA Active Current
– 3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10
4
or 10
5
Cycles
– Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Full Military, Commercial, and Industrial Temperature Ranges
Description
The AT28HC256 is a high-performance Electrically Erasable and Programmable
Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256
256 (32K x 8)
High Speed
Parallel
EEPROMs
AT28HC256
Rev. 0007G–10/98
Pin Configurations
Pin Name
Function
A0 - A14
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
LCC, PLCC
Top View
Note: PLCC package pins 1 and
17 are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
D
I
I
I
A
A
A
D
V
W
A
PGA
Top View
(continued)
CERDIP PDIP FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28HC256E-12SC | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256E-12SI | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256E-12TC | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256E-12TI | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256-90 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28HC256E-12SC | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K HI-ENDURANCE SDP-120NS COM TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC256E12SI | 制造商:Atmel Corporation 功能描述: |
| AT28HC256E-12SI | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K HI-ENDURANCE SDP-120NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC256E-12SI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 5V 28-Pin SOIC |
| AT28HC256E-12SU | 功能描述:電可擦除可編程只讀存儲(chǔ)器 Parallel 電可擦除可編程只讀存儲(chǔ)器 5V-120NS, 883c, GR RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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