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參數(shù)資料
| 型號(hào)： | AT28C64X-25SC |
| 廠商： | ATMEL CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 |
| 中文描述： | 8K X 8 EEPROM 5V, 250 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOIC-28 |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 312K |
| 代理商： | AT28C64X-25SC |
Description
(Continued)
Block Diagram
The AT28C64 is accessed like a Static RAM for the read
or write cycles without the need for external components.
During a byte write, the address and data are latched in-
ternally, freeing the microprocessor address and data bus
for other operations. Following the initiation of a write cy-
cle, the device will go to a busy state and automatically
clear and write the latched data using an internal control
timer. The device includes two methods for detecting the
end of a write cycle, level detection of RDY/BUSY (unless
pin 1 is N.C.) and DATA POLLING of I/O
7
. Once the end
of a write cycle has been detected, a new access for a
read or write can begin.
The CMOS technology offers fast access times of 120 ns
at low power dissipation. When the chip is deselected the
standby current is less than 100
μ
A.
Atmel’s 28C64 has additional features to ensure high
quality and manufacturability. The device utilizes error cor-
rection internally for extended endurance and for im-
proved data retention characteristics. An extra 32-bytes of
E
2
PROM are available for device identification or tracking.
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
2-194
AT28C64/X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28C64X-25SI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64X-25TC | Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 |
| AT28C64X-25TI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-15JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-15JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28C64X-25SI | 功能描述:電可擦除可編程只讀存儲(chǔ)器 64K -250NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C64X-25TC | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:64K (8K x 8) CMOS E2PROM |
| AT28C64X-25TI | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:64K 8K x 8 CMOS E2PROM |
| AT28C64X-30DM/883 | 制造商:Atmel Corporation 功能描述:8K X8 EEPROM WITH READT/BUSY - Rail/Tube |
| AT28C64X-30LM/883 | 制造商:Atmel Corporation 功能描述:8K X8 EEPROM WITH READT/BUSY - Rail/Tube |
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