參數(shù)資料
型號(hào)： AT28C64B-W
廠商： ATMEL CORP
元件分類(lèi)： DRAM
英文描述： 8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85
中文描述： 8K X 8 EEPROM 5V, 250 ns, UUC26
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 317K
代理商： AT28C64B-W
1
Features
Fast Read Access Time – 150 ns
Automatic Page Write Operation
–
Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
–
Page Write Cycle Time: 10 ms Maximum
–
1 to 64-byte Page Write Operation
Low Power Dissipation
–
40 mA Active Current
–
100
μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
–
Endurance: 100,000 Cycles
–
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel
’
s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
μA.
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Rev. 0270H
–
12/99
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don
’
t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note:
PLCC package pins 1 and 17 are
DON
’
T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
D
I
I
I
A
A
N
D
V
W
N
(continued)
相關(guān)PDF資料
PDF描述
AT28C64B 8K x 8 Parallel EEPROM with Page Write and Software Data Protection(8K x 8并行EEPROM帶分頁(yè)寫(xiě)數(shù)據(jù)保護(hù)和軟件數(shù)據(jù)保護(hù))
AT28C64B-15 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-BGA MICROSTAR JUNIOR -40 to 85
AT28C64B-15JC Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SO -40 to 85
AT28C64B-15JI 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28C64B-15PC Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT28C64E 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:64K 8K x 8 CMOS E2PROM
AT28C64E-12DC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EEPROM
AT28C64E-12DI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EEPROM
AT28C64E-12JC 功能描述:電可擦除可編程只讀存儲(chǔ)器 64K HI-ENDURANCE w/RDYBSY - 120NS RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28C64E-12JI 功能描述:電可擦除可編程只讀存儲(chǔ)器 64K HI-ENDURANCE w/RDYBSY-120NS RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
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