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參數(shù)資料
| 型號： | AT28BV16-25 |
| 廠商： | Atmel Corp. |
| 元件分類： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 64K的8K的× 8電池電壓的CMOS E2PROM的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 398K |
| 代理商： | AT28BV16-25 |
Device Operation
READ:
The AT28BV16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high im-
pedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE:
Writing data into the AT28BV16 is similar
to writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initi-
ates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a self-
clear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a pro-
gramming operation has been initiated and for the dura-
tion of t
WC
, a read operation will effectively be a polling
operation.
DATA POLLING:
The AT28BV16 provides DATA
POLLING to signal the completion of a write cycle. During
a write cycle, an attempted read of the data being written
results in the complement of that data for I/O
7
(the other
outputs are indeterminate). When the write cycle is fin-
ished, true data appears on all outputs.
READY/BUSY (TSOP only)
: READY/BUSY is an open
drain output; it is pulled low during the internal write cycle
and released at the completion of the write cycle.
WRITE PROTECTION:
Inadvertent writes to the device
are protected against in the following ways. (a) Vcc
sense— if Vcc is below 2.0V (typical) the write function is
inhibited. (b) Vcc power on delay— once Vcc has reached
2.0V the device will automatically time out 5 ms (typical)
before allowing a byte write. (c) Write Inhibit— holding any
one of OE low, CE high or WE high inhibits byte write cy-
cles.
DEVICE IDENTIFICATION:
An extra 32-bytes of
E
2
PROM memory are available to the user for device
identification. By raising A9 to 12
±
0.5V and using ad-
dress locations 7E0H to 7FFH the additional bytes may be
written to or read from in the same manner as the regular
memory array.
AT28BV16
2-121
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28BV16-25JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV16-25JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV16-25PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV16-25PI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV16-25SC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28BV16-25JC | 功能描述:電可擦除可編程只讀存儲器 16k bit RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28BV16-25JI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16K 2K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV16-25PC | 功能描述:IC EEPROM 16KBIT 250NS 24DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應商設備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT28BV16-25PI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16K 2K x 8 Battery-Voltage CMOS E2PROM |
| AT28BV1625SC | 制造商:Atmel Corporation 功能描述: |
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