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參數(shù)資料
| 型號： | AT27C512R-45 |
| 廠商： | Atmel Corp. |
| 英文描述： | ER 8C 7#16 1#12 SKT RECP BOX |
| 中文描述： | 為512k 64KX8的檢察官辦公室的CMOS存儲器 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 249K |
| 代理商： | AT27C512R-45 |
AC Programming Characteristics
T
A
= 25
±
5°C, V
CC
= 6.5
±
0.25V, OE/V
PP
= 13.0
±
0.25V
Sym-
bol
Parameter
Test
Condtions*
(1)
Limits
Units
Min
2
Max
t
AS
t
OES
t
OEH
t
DS
t
AH
t
DH
Address Setup Time
μ
s
OE/V
PP
Setup Time
2
μ
s
OE/V
PP
Hold Time
2
μ
s
Data Setup Time
2
μ
s
Address Hold Time
0
μ
s
Data Hold Time
CE High to
Output Float Delay
(2)
V
CC
Setup Time
CE Program Pulse Width
(3)
Data Valid from CE
(2)
2
μ
s
t
DFP
0
130
ns
t
VCS
t
PW
t
DV
t
VR
2
μ
s
95
105
μ
s
1
μ
s
OE/V
PP
Recovery Time
OE/V
PP
Pulse Rise
Time During Programming
2
μ
s
t
PRT
50
ns
*AC Conditions of Test:
Input Rise and Fall Times (10% to 90%).............. 20 ns
Input Pulse Levels....................................0.45V to 2.4V
Input Timing Reference Level....................0.8V to 2.0V
Output Timing Reference Level.................0.8V to 2.0V
Notes: 1. V
CC
must be applied simultaneously or before
OE/V
PP
and removed simultaneously or after
OE/V
PP
.
2. This parameter is only sampled and is not 100%
tested. Output Float is defined as the point where
data is no longer driven — see timing diagram.
3. Program Pulse width tolerance is 100
μ
sec
±
5%.
Atmel’s 27C512R Integrated
Product Identification Code
Codes
Pins
Hex
Data
A0
O7 O6 O5 O4 O3 O2 O1 O0
Manufacturer
Device Type
0
1
0
0
0
0
0
0
1
0
1
1
1
1
1
0
0
1
1E
0D
Rapid
Programming Algorithm
A 100
μ
s CE pulse width is used to program. The address
is set to the first location. V
CC
is raised to 6.5V and
OE/V
PP
is raised to 13.0V. Each address is first pro-
grammed with one 100
μ
s CE pulse without verification.
Then a verification/reprogramming loop is executed for
each address. In the event a byte fails to pass verification,
up to 10 successive 100
μ
s pulses are applied with a veri-
fication after each pulse. If the byte fails to verify after 10
pulses have been applied, the part is considered failed.
After the byte verifies properly, the next address is se-
lected until all have been checked. OE/V
PP
is then low-
ered to V
IL
and V
CC
to 5.0V. All bytes are read again and
compared with the original data to determine if the device
passes or fails.
AT27C512R
3-141
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT27C512R-45JC | 功能描述:可擦除可編程ROM 512k bit RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| AT27C512R-45JI | 功能描述:可擦除可編程ROM 512Kb (64Kx8) OTP 5V 45ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| AT27C512R-45JU | 功能描述:可擦除可編程ROM 512Kb (64Kx8) OTP 5V 45ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| AT27C512R-45JU-T | 功能描述:45NS, PLCC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:EPROM 技術(shù):EPROM - OTP 存儲容量:512Kb （64K x 8） 寫周期時間 - 字，頁:- 訪問時間:45ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:32-LCC（J 形引線） 供應商器件封裝:32-PLCC 標準包裝:1 |
| AT27C512R-45PC | 功能描述:IC OTP 512KBIT 45NS 28DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
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