參數(shù)資料
型號: AT27C256R-45PI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 256K 32K x 8 OTP CMOS EPROM
中文描述: 32K X 8 OTPROM, 45 ns, PDIP28
封裝: 0.600 INCH, PLASTIC, MS-011AB, DIP-28
文件頁數(shù): 7/9頁
文件大?。?/td> 251K
代理商: AT27C256R-45PI
AC Programming Characteristics
T
A
= 25
±
5°C, V
CC
= 6.5
±
0.25V, V
PP
= 13.0
±
0.25V
Sym-
bol
Parameter
Test
Conditions*
(1)
Limits
Min
Units
Max
t
AS
t
OES
Address Setup Time
2
μ
s
OE Setup Time
Data Setup
Time
Address Hold Time
2
μ
s
t
DS
2
μ
s
t
AH
t
DH
0
μ
s
Data Hold Time
OE High to Out-
put Float Delay
(2)
V
PP
Setup
Time
V
CC
Setup
Time
CE Program
Pulse Width
(3)
Data
Valid from OE
(2)
V
PP
Pulse Rise Time During
Programming
2
μ
s
t
DFP
0
130
ns
t
VPS
2
μ
s
t
VCS
2
μ
s
t
PW
95
105
μ
s
t
OE
150
ns
t
PRT
50
ns
*AC Conditions of Test:
Input Rise and Fall Times (10% to 90%)..............20 ns
Input Pulse Levels...................................0.45V to 2.4V
Input Timing Reference Level...................0.8V to 2.0V
Output Timing Reference Level................0.8V to 2.0V
Notes: 1. V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
2. This parameter is only sampled and is not 100%
tested. Output Float is defined as the point where
data is no longer driven — see timing diagram.
3. Program Pulse width tolerance is 100
μ
sec
±
5%.
Atmel’s 27C256R Integrated
Product Identification Code
Codes
Pins
Hex
Data
A0
O7 O6 O5 O4 O3 O2 O1 O0
Manufacturer
Device Type
0
1
0
1
0
0
0
0
1
0
1
1
1
1
1
0
0
0
1E
8C
Rapid
Programming Algorithm
A 100
μ
s CE pulse width is used to program. The address
is set to the first location. V
CC
is raised to 6.5V and V
PP
is
raised to 13.0V. Each address is first programmed with
one 100
μ
s CE pulse without verification. Then a verifica-
tion/reprogramming loop is executed for each address. In
the event a byte fails to pass verification, up to 10 succes-
sive 100
μ
s pulses are applied with a verification after
each pulse. If the byte fails to verify after 10 pulses have
been applied, the part is considered failed. After the byte
verifies properly, the next address is selected until all have
been checked. V
PP
is then lowered to 5.0V and V
CC
to
5.0V. All bytes are read again and compared with the origi-
nal data to determine if the device passes or fails.
AT27C256R
3-131
相關PDF資料
PDF描述
AT27C256R-45RI 256K 32K x 8 OTP CMOS EPROM
AT27C256R-45TC 256K 32K x 8 OTP CMOS EPROM
AT27C256R-45TI 256K 32K x 8 OTP CMOS EPROM
AT27C256R-55 256K 32K x 8 OTP CMOS EPROM
AT27C256R-55JC 256K 32K x 8 OTP CMOS EPROM
相關代理商/技術參數(shù)
參數(shù)描述
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AT27C256R-45RC 功能描述:IC OTP 256KBIT 45NS 28SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC(J 形引線) 供應商設備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC
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AT27C256R-45TC 功能描述:可擦除可編程ROM 256k bit RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92