參數(shù)資料
型號(hào): AT24C08AN-10SC
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 2-Wire Serial EEPROM
中文描述: 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, PLASTIC, SOIC-8
文件頁數(shù): 3/13頁
文件大?。?/td> 182K
代理商: AT24C08AN-10SC
AT24C02A/04A/08A
3
pin is connected to V
CC
, the write protection feature is
enabled and operates as shown in the following table.
Memory Organization
AT24C02A, 2K SERIAL EEPROM:
Internally organized
with 256 pages of 1-byte each, the 2K requires an 8 bit
data word address for random word addressing.
AT24C04A, 4K SERIAL EEPROM:
The 4K is internally
organized with 256 pages of 2-bytes each. Random word
addressing requires a 9 bit data word address.
AT24C08A, 8K SERIAL EEPROM:
The 8K is internally
organized with 4 blocks of 256 pages of 4-bytes each.
Random word addressing requires a 10 bit data word
address.
Note:
1. This parameter is characterized and is not 100% tested.
Note:
1. V
IL
min and V
IH
max are reference only and are not tested.
WP Pin
Status
Part of the Array Protected
24C02A
24C04A
24C08A
At V
CC
Upper Half
(1K) Array
Upper Half
(2K) Array
Full (8K)
Array
At GND
Normal Read/Write Operations
Pin Capacitance
Applicable over recommended operating range from T
A
= 25
°
C, f = 1.0 MHz, V
CC
= +1.8V.
Symbol
Test Condition
Max
Units
Conditions
C
I/O
Input/Output Capacitance (SDA)
8
pF
V
I/O
= 0V
C
IN
Input Capacitance (A
0
, A
1
, A
2
, SCL)
6
pF
V
IN
= 0V
DC Characteristics
Applicable over recommended operating range from: T
AI
= -40
°
C to +85
°
C, V
CC
= +1.8V to +5.5V, T
AC
= 0
°
C to +70
°
C,
V
CC
= +1.8V to +5.5V (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
V
CC1
Supply Voltage
1.8
5.5
V
V
CC2
Supply Voltage
2.5
5.5
V
V
CC3
Supply Voltage
2.7
5.5
V
V
CC4
Supply Voltage
4.5
5.5
V
I
CC
Supply Current V
CC
= 5.0V
READ at 100 kHz
0.4
1.0
mA
I
CC
Supply Current V
CC
= 5.0V
WRITE at 100 kHz
2.0
3.0
mA
I
SB1
Standby Current V
CC
= 1.8V
V
IN
= V
CC
or V
SS
0.6
3.0
μ
A
I
SB2
Standby Current V
CC
= 2.5V
V
IN
= V
CC
or V
SS
1.4
4.0
μ
A
I
SB3
Standby Current V
CC
= 2.7V
V
IN
= V
CC
or V
SS
1.6
4.0
μ
A
I
SB4
Standby Current V
CC
= 5.0V
V
IN
= V
CC
or V
SS
8.0
18.0
μ
A
I
LI
Input Leakage Current
V
IN
= V
CC
or V
SS
0.10
3.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
CC
or V
SS
0.05
3.0
μ
A
V
IL
Input Low Level
(1)
-0.6
V
CC
x 0.3
V
V
IH
Input High Level
(1)
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL2
Output Low Level V
CC
= 3.0V
I
OL
= 2.1 mA
0.4
V
V
OL1
Output Low Level V
CC
= 1.8V
I
OL
= 0.15 mA
0.2
V
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