
AT24C01A/02/04/08/16
3
Memory Organization
AT24C01A, 1K SERIAL EEPROM:
Internally organized
with 128 pages of 1-byte each, the 1K requires a 7-bit data
word address for random word addressing.
AT24C02, 2K SERIAL EEPROM:
Internally organized with
256 pages of 1-byte each, the 2K requires an 8-bit data
word address for random word addressing.
AT24C04, 4K SERIAL EEPROM:
The 4K is internally
organized with 256 pages of 2 bytes each. Random word
addressing Chip Number requires a 9-bit data word
address.
AT24C08, 8K SERIAL EEPROM:
The 8K is internally
organized with 4 blocks of 256 pages of 4 bytes each. Ran-
dom word addressing requires a 10-bit data word address.
AT24C16, 16K SERIAL EEPROM:
The 16K is internally
organized with 8 blocks of 256 pages of 8 bytes each. Ran-
dom word addressing requires an 11-bit data word
address.
Note:
1. This parameter is characterized and is not 100% tested.
Note:
1. V
IL
min and V
IH
max are reference only and are not tested.
WP Pin
Status
Part of the Array Protected
24C01A
24C02
24C04
24C08
24C16
At V
CC
Full (1K)
Array
Full (2K)
Array
Full (4K)
Array
Normal
Read/
Write
Operation
Upper
Half
(8K)
Array
At GND
Normal Read/Write Operations
Pin Capacitance
(1)
Applicable over recommended operating range from T
A
= 25
°
C, f = 1.0 MHz, V
CC
= +1.8V.
Symbol
Test Condition
Max
Units
Conditions
C
I/O
Input/Output Capacitance (SDA)
8
pF
V
I/O
= 0V
C
IN
Input Capacitance (A
0
, A
1
, A
2
, SCL)
6
pF
V
IN
= 0V
DC Characteristics
Applicable over recommended operating range from: T
AI
= -40
°
C to +85
°
C, V
CC
= +1.8V to +5.5V, T
AC
= 0
°
C to +70
°
C,
V
CC
= +1.8V to +5.5V (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
V
CC1
Supply Voltage
1.8
5.5
V
V
CC2
Supply Voltage
2.5
5.5
V
V
CC3
Supply Voltage
2.7
5.5
V
V
CC4
Supply Voltage
4.5
5.5
V
I
CC
Supply Current V
CC
= 5.0V
READ at 100 kHz
0.4
1.0
mA
I
CC
Supply Current V
CC
= 5.0V
WRITE at 100 kHz
2.0
3.0
mA
I
SB1
Standby Current V
CC
= 1.8V
V
IN
= V
CC
or V
SS
0.6
3.0
μ
A
I
SB2
Standby Current V
CC
= 2.5V
V
IN
= V
CC
or V
SS
1.4
4.0
μ
A
I
SB3
Standby Current V
CC
= 2.7V
V
IN
= V
CC
or V
SS
1.6
4.0
μ
A
I
SB4
Standby Current V
CC
= 5.0V
V
IN
= V
CC
or V
SS
8.0
18.0
μ
A
I
LI
Input Leakage Current
V
IN
= V
CC
or V
SS
0.10
3.0
μ
A
I
LO
Output Leakage Current
V
OUT
= V
CC
or V
SS
0.05
3.0
μ
A
V
IL
Input Low Level
(1)
-0.6
V
CC
x 0.3
V
V
IH
Input High Level
(1)
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL2
Output Low Level V
CC
= 3.0V
I
OL
= 2.1 mA
0.4
V
V
OL1
Output Low Level V
CC
= 1.8V
I
OL
= 0.15 mA
0.2
V