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參數(shù)資料
| 型號： | AT24C04-10TI-1.8 |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 128 x 64 pixel format, LED or EL Backlight available |
| 中文描述： | 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封裝： | 4.40 MM, PLASTIC, MO-153AA, TSSOP-8 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 261K |
| 代理商： | AT24C04-10TI-1.8 |
8
AT24C01ASC/02SC/04SC/08SC/16SC
1610B
–
SEEPR
–
04/04
Write Operations
BYTE WRITE:
A write operation requires an 8-bit data word address following the
device address word and acknowledgment. Upon receipt of this address, the EEPROM
will again respond with a
“
0
”
(ACK) and then clock in the first 8-bit data word. Following
receipt of the 8-bit data word, the EEPROM will output a
“
0
”
(ACK) and the addressing
device, such as a microcontroller, must terminate the write sequence with a stop condi-
tion. At this time the EEPROM enters an internally-timed write cycle, t
WR
, to the
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will
not respond until the write is complete (refer to Figure 7).
Figure 7.
Byte Write
PAGE WRITE:
The 1K/2K EEPROM is capable of an 8-byte page write, and the 4K, 8K,
and 16K devices are capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send
a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to 7
(1K/2K) or 15 (4K, 8K, 16K) more data words. The EEPROM will respond with a
“
0
”
(ACK) after each data word received. The microcontroller must terminate the page write
sequence with a stop condition (refer to Figure 8).
Figure 8.
Page Write
Note:
* = DON
’
T CARE bit for 1K
The data word address lower three (1K/2K) or four (4K, 8K, 16K) bits are internally
incremented following the receipt of each data word. The higher data word address bits
are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the
beginning of the same page. If more than eight (1K/2K) or 16 (4K, 8K, 16K) data words
are transmitted to the EEPROM, the data word address will
“
roll over
”
and previous data
will be overwritten.
ACKNOWLEGE POLLING:
Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves send-
ing a start condition followed by the device address word. The read/write bit is
representative of the operation desired. Only if the internal write cycle has completed
W
R
I
T
E
S
T
A
R
T
WORD ADDRESS
L
S
B
DATA
S
T
O
P
*
(n)
DATA (n)
DATA (n + 1)
DATA (n + x)
相關PDF資料 |
PDF描述 |
|---|---|
| AT24C02-10TU-1.8 | 240 x 128 pixel format, CFL Backlight with power harness |
| AT24C02U3-10UU-1.8 | TESTER IN-CIRCUIT DCR/ESR |
| AT24C04U3-10UU-1.8 | BK Precision Synthesized In-Circuit LCR/ESR Meter, Frequency: 100 Hz, 120 Hz, 1 KHz, 10 KHz, Frequency Accuracy: +/-.1 %, Level: 1 V RMS, .25 V RMS, .05 V RMS, 1 VDC, Level Accuracy: +/-5 %, Output Impedance: 100 Ohm |
| AT24C02-W1.8-11 | 2-Wire Serial EEPROM |
| AT24C04-W1.8-11 | 2-Wire Serial EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT24C04-10TI-2.5 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Wire Serial EEPROM |
| AT24C04-10TI-2.7 | 功能描述:IC EEPROM 4KBIT 400KHZ 8TSSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT24C0410TQ2.7 | 制造商:Atmel Corporation 功能描述: |
| AT24C04-10TSU-1.8 | 功能描述:電可擦除可編程只讀存儲器 7 MILS 1.8V - 10MS 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C04-10TSU-1.8 SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Serial-2Wire 4K-Bit 512 x 8 2.5V/3.3V/5V 5-Pin SOT-23 T/R |
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