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參數(shù)資料
| 型號(hào)： | AT24C01B |
| 廠商： | Atmel Corp. |
| 英文描述： | Two-wire Serial EEPROM |
| 中文描述： | 兩線串行EEPROM |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大?。?/td> | 458K |
| 代理商： | AT24C01B |
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9
AT24C01B [Preliminary]
5156B–
S
EEPR–5/06
Device Addressing
The 1K EEPROM device requires
a
n
8
-
b
it device
a
ddress word following
a
st
a
rt condi-
tion to en
ab
le the chip for
a
re
a
d or write oper
a
tion (refer to Figure 7).
The device
a
ddress word consists of
a
m
a
nd
a
tory one, zero sequence for the first four
most signific
a
nt
b
its
a
s shown. This is common to
a
ll the EEPROM devices.
The next
3
b
its
a
re the A2, A1
a
nd A0 device
a
ddress
b
its for the 1K EEPROM. These
3
b
its must comp
a
re to their corresponding h
a
rd-wired input pins.
The eighth
b
it of the device
a
ddress is the re
a
d/write oper
a
tion select
b
it. A re
a
d oper
a
-
tion is initi
a
ted if this
b
it is high
a
nd
a
write oper
a
tion is initi
a
ted if this
b
it is low.
Upon
a
comp
a
re of the device
a
ddress, the EEPROM will output
a
zero. If
a
comp
a
re is
not m
a
de, the chip will return to
a
st
a
nd
b
y st
a
te.
Write Operations
BYTE WRITE:
A write oper
a
tion requires
a
n
8
-
b
it d
a
t
a
word
a
ddress following the
device
a
ddress word
a
nd
a
cknowledgment. Upon receipt of this
a
ddress, the EEPROM
will
a
g
a
in respond with
a
zero
a
nd then clock in the first
8
-
b
it d
a
t
a
word. Following
receipt of the
8
-
b
it d
a
t
a
word, the EEPROM will output
a
zero
a
nd the
a
ddressing
device, such
a
s
a
microcontroller, must termin
a
te the write sequence with
a
stop condi-
tion. At this time the EEPROM enters
a
n intern
a
lly timed write cycle, t
WR
, to the
nonvol
a
tile memory. All inputs
a
re dis
ab
led during this write cycle
a
nd the EEPROM will
not respond until the write is complete (see Figure
8
on p
a
ge 11).
PAGE WRITE:
The 1K EEPROM is c
a
p
ab
le of
a
n
8
-
b
yte p
a
ge write.
A p
a
ge write is initi
a
ted the s
a
me
a
s
a
b
yte write,
b
ut the microcontroller does not send
a
stop condition
a
fter the first d
a
t
a
word is clocked in. Inste
a
d,
a
fter the EEPROM
a
cknowledges receipt of the first d
a
t
a
word, the microcontroller c
a
n tr
a
nsmit up to seven
d
a
t
a
words. The EEPROM will respond with
a
zero
a
fter e
a
ch d
a
t
a
word received. The
microcontroller must termin
a
te the p
a
ge write sequence with
a
stop condition (see Fig-
ure 9 on p
a
ge 11).
The d
a
t
a
word
a
ddress lower three
b
its
a
re intern
a
lly incremented following the receipt
of e
a
ch d
a
t
a
word. The higher d
a
t
a
word
a
ddress
b
its
a
re not incremented, ret
a
ining the
memory p
a
ge row loc
a
tion. When the word
a
ddress, intern
a
lly gener
a
ted, re
a
ches the
p
a
ge
b
ound
a
ry, the following
b
yte is pl
a
ced
a
t the
b
eginning of the s
a
me p
a
ge. If more
th
a
n eight d
a
t
a
words
a
re tr
a
nsmitted to the EEPROM, the d
a
t
a
word
a
ddress will “roll
over”
a
nd previous d
a
t
a
will
b
e overwritten.
ACKNOWLEDGE POLLING:
Once the intern
a
lly timed write cycle h
a
s st
a
rted
a
nd the
EEPROM inputs
a
re dis
ab
led,
a
cknowledge polling c
a
n
b
e initi
a
ted. This involves send-
ing
a
st
a
rt condition followed
b
y the device
a
ddress word. The re
a
d/write
b
it is
represent
a
tive of the oper
a
tion desired. Only if the intern
a
l write cycle h
a
s completed
will the EEPROM respond with
a
zero
a
llowing the re
a
d or write sequence to continue.
Read Operations
Re
a
d oper
a
tions
a
re initi
a
ted the s
a
me w
a
y
a
s write oper
a
tions with the exception th
a
t
the re
a
d/write select
b
it in the device
a
ddress word is set to one. There
a
re three re
a
d
oper
a
tions: current
a
ddress re
a
d, r
a
ndom
a
ddress re
a
d
a
nd sequenti
a
l re
a
d.
CURRENT ADDRESS READ:
The intern
a
l d
a
t
a
word
a
ddress counter m
a
int
a
ins the
l
a
st
a
ddress
a
ccessed during the l
a
st re
a
d or write oper
a
tion, incremented
b
y one. This
a
ddress st
a
ys v
a
lid
b
etween oper
a
tions
a
s long
a
s the chip power is m
a
int
a
ined. The
a
ddress “roll over” during re
a
d is from the l
a
st
b
yte of the l
a
st memory p
a
ge to the first
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT24C01B_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Two-wire Serial EEPROM 1K (128 x 8) |
| AT24C01B_09 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Two-wire Automotive Temperature Serial EEPROM |
| AT24C01B-10PU-2.7 | 制造商:Atmel Corporation 功能描述: |
| AT24C01BN-SH-B | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1K 2-WIRE 128 x 8 1.8V RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C01BNSHT | 制造商:Atmel Corporation 功能描述: |
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