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參數(shù)資料
| 型號： | AT12015-21 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON ABRUPT VARACTOR DIODE |
| 中文描述： | 14 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | HERMETIC SEALED, 21, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 31K |
| 代理商： | AT12015-21 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
R
I
R
= 10
μ
A
V
F
I
F
= 1 mA
I
R
V
R
= 100 V
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
120
UNITS
V
1.0
V
100
nA
C
T
C
T
Q
V
R
= 4 V f = 1.0 MHz
C
T0
/ C
T120
f = 1.0 MHz
V
R
= 4 V f = 50 MHz
I
F
= 10 mA f = 2400 MHz
12
14
16
pF
8.5
---
300
---
R
S
0.9
SILICON ABRUPT VARACTOR DIODE
AT12015-21
DESCRIPTION:
The
AT12015-21
is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
FEATURES INCLUDE:
High Tuning Ratio,
C
T
= 8.5 MIN.
High Quality Factor,
Q = 300 MIN.
Hermetic Pkg,
C
P
= .20 pF
L
S
= .42 nH
MAXIMUM RATINGS
I
F
200 mA
V
R
120 V
P
DISS
1.75W @ T
C
25
O
C
-55
O
C to +150
O
C
-55
O
C to +150
O
C
70
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE 21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT12016-21 | SILICON ABRUPT VARACTOR DIODE |
| AT12017-21 | SILICON ABRUPT VARACTOR DIODE |
| AT12020-21 | SILICON ABRUPT VARACTOR DIODE |
| AT1202 | High Voltage Linear Regulator |
| AT1202X | High Voltage Linear Regulator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT12016-21 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON ABRUPT VARACTOR DIODE |
| AT12017-21 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON ABRUPT VARACTOR DIODE |
| AT1202 | 制造商:AIMTRON 制造商全稱:AIMTRON 功能描述:High Voltage Linear Regulator |
| AT12020-21 | 制造商:ASI 制造商全稱:ASI 功能描述:SILICON ABRUPT VARACTOR DIODE |
| AT1202X | 制造商:AIMTRON 制造商全稱:AIMTRON 功能描述:High Voltage Linear Regulator |
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