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參數(shù)資料
| 型號： | AT-64023 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.230 INCH, HERMETIC SEALED, METAL PACKAGE-2 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AT-64023 |
3
AT-64023 Typical Performance, TA = 25°C
Typical Scattering Parameters, Common Emitter, ZO = 50Ω, TA=25°C, VCE=16 V, IC = 110 mA
Freq.
GHz
S11
S21
S12
S22
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
.54
-124
28.2
25.71
135
-33.3
.022
42
.72
-51
0.5
.80
-178
17.6
7.57
78
-29.5
.034
18
.33
-119
1.0
.80
162
11.9
3.92
47
-28.6
.037
10
.33
-142
1.5
.80
147
8.6
2.70
21
-27.9
.040
12
.40
-156
2.0
.78
133
6.3
2.07
-4
-27.6
.042
1
.48
-169
2.5
.77
127
5.1
1.80
-24
-25.5
.053
-5
.58
-178
3.0
.73
116
3.8
1.56
-51
-25.0
.056
-20
.67
170
3.5
.66
106
2.9
1.40
-79
-25.8
.051
-28
.78
156
4.0
.60
99
2.2
1.28
-109
-27.2
.044
-49
.86
142
4.5
.55
98
1.4
1.18
-141
-31.2
.028
-70
.93
127
5.0
.54
99
0.6
1.07
-175
-40.9
.009
-144
.93
112
S-parameters at other bias conditions are available on the Avago Design Pak disk.
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 16 V, IC = 110 mA.
GA
IN
(d
B)
0.1
0.5
0.3
1.0
3.0 5.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression
vs. Frequency and Collector Current. VCE = 16 V.
29
28
27
26
25
24
P 1
dB
(d
Bm
)
1.0
2.0
3.0
4.0
150 mA
110 mA
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
POWER IN (dBm)
Figure 3. Output Power and Efficiency vs. Input
Power. VCE = 16 V, IC = 110 mA, f = 4.0 GHz.
PO
W
ER
OU
T(
dB
m
)
30
25
20
15
10
5
0
40
30
20
10
0
EF
FI
CI
EN
CY
(%
)
0
10
5
15
20
25
POUT
hT
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs. Frequency and
Collector Current. VCE= 16 V.
18
15
12
9
6
G 1
dB
(d
B)
1.0
2.0
3.0
4.0
150 mA
70 mA
110 mA
70 mA
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