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參數(shù)資料
| 型號： | AT-64020G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 64K |
| 代理商： | AT-64020G |
2
AT-64020 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
2
VCBO
Collector-Base Voltage
V
40
VCEO
Collector-Emitter Voltage
V
20
IC
Collector Current
mA
200
PT
Power Dissipation [2,3]
W3
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance [2,4]:
θ
jc = 40
°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25
°C.
3. Derate at 25 mW/
°C for T
C > 80
°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25
°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
dB
7.0
f = 4.0 GHz
2.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
26.5
27.5
VCE = 16 V, IC = 110 mA
f= 4.0 GHz
26.5
G1 dB
1 dB Compressed Gain; VCE = 16 V, IC = 110 mA
f = 2.0 GHz
dB
8.5
10.0
f = 4.0 GHz
6.5
η
T
Total Efficiency at 1 dB Compression:
f = 4.0 GHz
%
35.0
VCE = 16 V, IC = 110 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA
—
20
50
200
ICBO
Collector Cutoff Current; VCB = 16 V
A
100
IEBO
Emitter Cutoff Current; VEB = 1 V
A
5.0
Note:
1.
η
T = (RF Output Power) / (RF Input Power + VCE I C).
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