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參數(shù)資料
| 型號(hào)： | AT-42085 |
| 英文描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高達(dá)6 GHz中等功率硅雙極型晶體管) |
| 中文描述： | 到6 GHz中等功率硅雙極晶體管芯片（高達(dá)6 GHz的中等功率硅雙極型晶體管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 43K |
| 代理商： | AT-42085 |
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
High Output Power:
20.5 dBm Typical P
1 dB
at 2.0 GHz
High Gain at 1 dB
Compression:
14.0 dB Typical
G
1 dB
at 2.0 GHz
Low Noise Figure:
2.0 dB Typical
NF
O
at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Low Cost Plastic Package
AT-42085
85 Plastic Package
Description
Agilent’s AT-42085 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigi-
tated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applica-
tions. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42085 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42086 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-TR1 | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-MPW-SYS(UK) | ENTWICKLUNGSWERKZEUG |
| AT-S5007 | Analog IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-42085G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42086 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | FO-163 |
| AT-42086 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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