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參數(shù)資料
| 型號： | AT-42035 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, MICROSTRIP-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 74K |
| 代理商： | AT-42035 |
Agilent AT-42035
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Features
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Cost Effective Ceramic
Microstrip Package
Lead-free Option Available
35 micro-X Package
Description
Agilent’s AT-42035 is a general
purpose NPN bipolar transistor that
offers excellent high frequency
performance. The AT-42035 is
housed in a cost effective surface
mount 100 mil micro-X package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that are
easy to match for low noise and
medium power applications. This
device is designed for use in low
noise, wideband amplifier, mixer
and oscillator applications in the
VHF, UHF, and microwave frequen-
cies. An optimum noise match near
50
up to 1 GHz, makes this device
easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is
fabricated using Agilent’s 10 GHz fT
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42035G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42035 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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