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參數(shù)資料
| 型號(hào)： | AT-42010 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 140K |
| 代理商： | AT-42010 |
AT-42010
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Features
HighOutputPower:
21.0dBmTypicalP1dBat2.0GHz
20.5dBmTypicalP1dBat4.0GHz
HighGainat1dBCompression:
14.0dBTypicalG1dBat2.0GHz
9.5dBTypicalG1dBat4.0GHz
LowNoiseFigure:
1.9dBTypicalNFOat2.0GHz
HighGain-BandwidthProduct:8.0GHzTypicalfT
HermeticGold-ceramicMicrostripPackage
100 mil Package
Description
Avago’sAT-42010isageneralpurposeNPNbipolartran-
sistorthatoffersexcellenthighfrequencyperformance.
The AT-42010 is housed in a hermetic, high reliability
100milceramicpackage.The4micronemitter-to-emitter
pitchenablesthistransistortobeusedinmanydifferent
functions.The20emitterfingerinterdigitatedgeometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications.Thisdeviceisdesignedforuseinlownoise,
widebandamplifier,mixerandoscillatorapplicationsin
theVHF,UHF,andmicrowavefrequencies.Anoptimum
noise match near 50Ω up to 1GHz, makes this device
easytouseasalownoiseamplifier.
TheAT-42010bipolartransistorisfabricatedusingAvago’s
10GHzfTSelf-Aligned-Transistor(SAT)process.Thedieis
nitridepassivatedforsurfaceprotection.Excellentdevice
uniformity,performanceandreliabilityareproducedby
the use of ion-implantation, self-alignment techniques,
andgoldmetalizationinthefabricationofthisdevice.
IFD-53010 pkg
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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