參數(shù)資料
型號: AT-41586-TR1
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, 86, 4 PIN
文件頁數(shù): 1/5頁
文件大小: 81K
代理商: AT-41586-TR1
AT-41586
Low Cost General Purpose Transistors
Data Sheet
Features
Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
Low Cost Surface Mount Package
Tape and Reel Option Available
Lead-free Option Available
Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
VCE = 8 V, IC = 10 mA.
FREQUENCY (GHz)
4.0
1.0
6
0
24
21
3
15
18
0.5
12
9
3.0
2.0
2
4
0
G
(dB)
A
O
NF
(dB)
GA
O
NF
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
86 Plastic Package
Description
Avago’s AT-41586 is a general purpose NPN bipolar
transistor that offers excellent high frequency
performance. The AT-41586 is housed in a low cost
surface mount .085" diameter plastic package. The
4 micron emitter-to-emitter pitch enables this transistor
to be used in many different functions. The 14 emitter
finger interdigitated geometry yields an intermediate
sized transistor with impedances that are easy to match
for low noise and moderate power applications.
Applications include use in wireless systems as an LNA,
gain stage, buffer, oscillator, and mixer. An optimum
noise match near 50
in the 1 to 2 GHz frequency range,
makes this device easy to use as a low noise amplifier.
The AT-41586 bipolar transistor is fabricated using
Avago’s 10 GHz f
T Self-Aligned-Transistor (SAT) process.
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability
are produced by the use of ion-implantation, self-
alignment techniques, and gold metalization in the
fabrication of this device.
Pin Connections
415
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