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參數(shù)資料
| 型號(hào)： | AT-41532 |
| 英文描述： | General Purpose, Low Current NPN Silicon Bipolar Transistor(通用，小電流，NPN硅雙極型晶體管) |
| 中文描述： | 通用型，低電流NPN硅雙極晶體管（通用，小電流，npn型硅雙極型晶體管） |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 88K |
| 代理商： | AT-41532 |
General Purpose, Low Current
NPN Silicon Bipolar Transistor
Technical Data
Features
General Purpose NPN
Bipolar Transistor
Optimized for Low Current,
Low Voltage Applications at
900 MHz, 1.8 GHz, and
2.4 GHz
Performance ( 5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB G
A
1.8 GHz: 1.4 dB NF, 10.5 dB G
A
2.4 GHz: 1.9 dB NF, 9 dB G
A
Characterized for 3, 5, and
8 V Use
Miniature 3-lead SOT-323
( SC-70) Plastic Package
High Breakdown Voltage
( can be operated up to 10 V)
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
LNA, Oscillator, Mixer, and
Gain Amplifier for
Pagers
Power Amplifier and
Oscillator for
RF-ID Tag
LNA and Gain Amplifier for
GPS
LNA for
CATV Set-Top Box
AT-41532
Description
Agilent’s AT-41532 is a general
purpose NPN bipolar transistor
that has been optimized for
maximum f
t
at low voltage
operation, making it ideal for use
in
battery powered
applications in cellular/PCS
and other wireless markets
.
The AT-41532 uses the miniature
3-lead SOT-323 (SC-70) plastic
package.
Optimized performance at 5 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB NF and
15.5 dB associated gain at 5 V and
5 mA bias. High gain capability at
1 V and 1 mA makes this device a
good fit for
900 MHz pager
applications
. A good noise
match near 50 ohms at 900 MHz
makes this a very user-friendly
device. Moreover, voltage
breakdowns are high enough to
support operation at 10 V.
The AT-41532 belongs to Agilent’s
AT-4XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance,
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
BASE
EMITTER
COLLECTOR
41
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-41586-BLK | Low Cost General Purpose Transistors |
| AT-41586-TR1 | Low Cost General Purpose Transistors |
| AT-8PORT232FIFO | SERIAL CARD RS232 9D 8 PORT |
| AT-900 | Stripline Mounting Fixed Attenuators (DC to 8 GHz) |
| AT-901 | Stripline Mounting Fixed Attenuators (DC to 8 GHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41532-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:NPN SILICON TRANSISTOR |
| AT-41532-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41532-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41532-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41532-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
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