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參數(shù)資料
| 型號(hào)： | AT-41486 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達(dá)6 GHz低噪聲硅雙極型晶體管) |
| 中文描述： | 到6 GHz低噪聲硅雙極型晶體管（高達(dá)6 GHz的低噪聲硅雙極型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | AT-41486 |
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-41486
86 Plastic Package
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Agilent’s AT-41486 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
Pin Connections
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-41511 | NPN Silicon Bipolar Transistor(NPN硅雙極型晶體管) |
| AT-41532 | General purpose transistor |
| AT-41532-TR2 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
| AT-41586 | Low Cost General Purpose Transistors(低價(jià)格通用晶體管) |
| AT-42010 | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高達(dá)6 GHz中等功率硅雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41486-BLK | 功能描述:TRANS SIL LOW NOISE BIPOLAR 86PL RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41486-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT41486TR1 | 制造商:HP 功能描述:* |
| AT-41486-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41486-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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