- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364722 > AT-41486-BLK Up to 6 GHz Low Noise Silicon Bipolar Transistor PDF資料下載
參數(shù)資料
| 型號： | AT-41486-BLK |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| 中文描述： | 到6 GHz低噪聲硅雙極晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 59K |
| 代理商： | AT-41486-BLK |
4-129
Up to 6 GHz Low Noise
SiliconBipolar Transistor
Technical Data
Features
Low Noise Figure:
1.4 dB Typical at 1.0GHz
1.7 dB Typical at 2.0GHz
High Associated Gain:
18.0 dB Typical at 1.0GHz
13.0 dB Typical at 2.0GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Surface Mount Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-41486
86 Plastic Package
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
at 900 MHz, makes this
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
1
4
3
2
EMITTER
BASE
EMITTER
COLLECTOR
Pin Connections
5965-8928E
4
相關PDF資料 |
PDF描述 |
|---|---|
| AT-41486-TR1 | Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT41486 | Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41511-BLK | General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41533-TR1 | General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41511-TR1 | General Purpose, Low Noise NPN Silicon Bipolar Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41486-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT41486TR1 | 制造商:HP 功能描述:* |
| AT-41486-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| AT-41486-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41486-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。