參數(shù)資料
型號: AT-41411-TR2G
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號晶體管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, PLASTIC PACKAGE-4
文件頁數(shù): 1/5頁
文件大?。?/td> 66K
代理商: AT-41411-TR2G
Agilent AT-41411
Surface Mount Low Noise
Silicon Bipolar Transistor Chip
Data Sheet
Features
Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.8 dB Typical at 2.0 GHz
High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
High Gain-Bandwidth
Product:
7.0 GHz Typical fT
Low Cost Surface Mount
Plastic Package
Tape-and-Reel Packaging
Option Available
Lead-free Option Available
SOT-143 Plastic
Description
Agilent’s AT-41411 is a general
purpose NPN bipolar transistor that
offers excellent high frequency
performance. The AT-41411 is
housed in a low cost low parasitic
4 lead SOT-143 surface mount
package. The SOT-143 is an indus-
try standard and is compatible with
high volume surface mount assem-
bly techniques. The 4 micron
emitter-to-emitter pitch enables this
transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that are
easy to match for low noise and
moderate power applications. This
device is designed for use in low
noise, wideband amplifier, mixer
and oscillator applications in the
VHF, UHF, and microwave frequen-
cies. An optimum noise match near
50
in the 1 to 2 GHz frequency
range, makes this device easy to
use as a low noise amplifier.
The AT-41411 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Pin Connections
EMITTER
COLLECTOR
BASE
EMITTER
414
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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AT-41411-TR2G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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