參數(shù)資料
型號(hào): AT-36408
英文描述: Silicon Power Transistors(硅功率型晶體管)
中文描述: 硅功率晶體管(硅功率型晶體管)
文件頁數(shù): 1/8頁
文件大?。?/td> 89K
代理商: AT-36408
4.8 V NPN Common Emitter
Output Power Transistor
for GSM Class IV Phones
Technical Data
Features
4.8 Volt Pulsed Operation
( pulse width = 577
μ
sec,
duty cycle = 12.5%)
+35.0 dBm P
out
@ 900 MHz,
Typ.
65% Collector Efficiency
@ 900 MHz, Typ.
9 dB Power Gain @ 900 MHz,
Typ.
Internal Input Pre-Matching
Facilitates Cascading
Applications
Output Power Device for
GSM Class IV Handsets
AT-36408
Description
Agilent’s AT-36408 combines
internal input pre-matching with
low cost, NPN power silicon
bipolar junction transistors in a
SOIC-8 surface mount plastic
package. This device is designed
for use as the output device for
GSM Class IV handsets. At 4.8
volts, the device features +35 dBm
pulsed output power, superior
power added efficiency, and
excellent gain, making the
AT-36408 an excellent choice for
battery powered systems.
The AT-36408 is fabricated with
Agilent’s 10 GHz F
T
Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the use
of ion-implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
SOIC-8 Surface Mount
Plastic Package
Outline P8
Pin Configuration
EMITTER
EMITTER
EMITTER
EMITTER
BASE
BASE
1
8
2
7
COLLECTOR
COLLECTOR
3
6
4
5
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