參數(shù)資料
型號(hào): AT-33225-BLK
英文描述: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones
中文描述: 4.8 V叩共發(fā)射極輸出功率晶體管用于AMPS,ETACS電話
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 118K
代理商: AT-33225-BLK
4-71
4.8 V NPN Common Emitter
Output Power Transistor
forAMPS, ETACS Phones
Technical Data
Features
4.8 Volt Operation
+31.0 dBm P
out
@ 900 MHz,
Typ.
70% Collector Efficiency
@900 MHz, Typ.
9 dB Power Gain @ 900 MHz,
Typ.
-29 dBc IMD
3
@ P
out
of
24dBm per tone, 900 MHz,
Typ.
Internal Input Pre-Matching
Facilitates Cascading
50% Smaller than SOT-223
Package
Applications
Output Power Device for
AMPS and ETACS Handsets
900 MHz ISM
AT-33225
Description
Hewlett Packard’s AT-33225 is a
low cost, NPN power silicon
bipolar junction transistor housed
in a miniature MSOP-3 surface
mount plastic package. This
device is designed for use as an
output device for AMPS and
ETACS mobile phones. The
AT-33225 features over 1 watt
CWoutput power when operated
at 4.8 volts. Excellent gain and
superior efficiency make the
AT-33225 ideal for use in battery
powered systems.
The AT-33225 is fabricated with
Hewlett Packard’s 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
MSOP-3 Surface Mount
Plastic Package
Outline 25
Pin Configuration
EMITTER
1
2
BASE
3
EMITTER
COLLECTOR
4
5965-5910E
相關(guān)PDF資料
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