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參數(shù)資料
| 型號： | AT-32032 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管) |
| 中文描述： | 低電流，高性能NPN硅雙極型晶體管（小電流，高性能npn型硅雙極型晶體管） |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 92K |
| 代理商： | AT-32032 |
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Agilent’s AT-32032 is a high
performance NPN bipolar
transistor that has been optimized
for maximum f
t
at low voltage
operation, making it ideal for use
in battery powered applications in
cellular/PCS and other wireless
markets. The AT-32032 uses the
miniature 3lead SOT-323 (SC-70)
plastic package.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
systems. Typical amplifier design
at 900 MHz yields 1 dB noise
figures with 15 dB associated gain
at 2.7 V and 5 mA bias condition,
with noise performance being
relatively insensitive to input
match. High gain capability at 1 V
and 1 mA makes this device a
good fit for 900 MHz pager
applications. Moreover, voltage
breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Agilent’s
AT-3XXXX series bipolar
transistors. It exhibits excellent
device uniformity, performance
and reliability as a result of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication process.
AT-32032
3-Lead SC-70 (SOT-323)
Surface Mount Plastic
Package
Pin Configuration
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Applications at 900 MHz,
1.8 GHz, and 2.4 GHz
Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB G
A
1800 MHz: 1.3 dB NF, 11 dB G
A
2400 MHz: 1.4 dB NF, 7.5 dB G
A
Characterized for End-Of-
Life Battery Use (2.7 V)
Miniature 3-lead SOT-323
(SC-70) Plastic Package
Applications
LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
LNA, Oscillator, Mixer, and
Gain Amplifier for
Pagers
Power Amplifier and
Oscillator for
RF-ID Tag
LNA and Gain Amplifier for
GPS
LNA for
CATV Set-Top Box
BASE
EMITTER
COLLECTOR
32
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-32033-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32011-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32033 | Low Current, High Performance NPN Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32032-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:AT32032 |
| AT-32032-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR1 | 功能描述:IC TRANS NPN BIPOLAR SOT-323 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-32032-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32032-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323 |
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