參數(shù)資料
型號(hào): AT-32011-BLKG
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-4
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 279K
代理商: AT-32011-BLKG
3
Characterization Information, TA = 25°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Typ.
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
13
G1dB
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dB
16.5
15
IP3
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
24
|S21|E2
Gain in 50 System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
13
11.5
AT-32011 fig 2
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
1
1.5
2
1
0.5
2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 3
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
25
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 4
Ga
(dB)
0
FREQUENCY (GHz)
1.0
1.5
10
5
0.5
2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7V.
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at VCE = 2.7V.
AT-32011 fig 5
P
1dB
(dBm
)
0
-5
FREQUENCY (GHz)
1.0
1.5
20
5
0
0.5
2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 6
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011 fig 7
G
1dB
(dB)
0
FREQUENCY (GHz)
1.0
1.5
20
10
5
0.5
2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
相關(guān)PDF資料
PDF描述
AT-32033-TR2G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-BLKG UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR2G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR1G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-TR1G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT-32011-TR1 功能描述:IC TRANS NPN BIPOLAR SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿(最大):4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
AT-32011-TR1G 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT-32011-TR2G 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT320240Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:李守華 15889415469
AT-320240Q1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AT-320240Q1 320 X 240 DOTS 1/240 DUTY