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參數(shù)資料
| 型號(hào)： | AT-30533-TR1 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 101K |
| 代理商： | AT-30533-TR1 |
4-23
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum f
T
at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB G
A
AT-30533: 1.1 dB NF, 13 dB G
A
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-And-Reel Packaging
Option Available
[1]
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10GHz f
T
, 30 GHz f
MAX
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-30511
AT-30533
Outline Drawing
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
305
305
SOT-23 (AT-30533)
SOT-143 (AT-30511)
5965-8918E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-30511-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30511BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-30533-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-30533-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT305AC | 制造商:MCM 功能描述:CHARGER AND CHARGER CABLE |
| AT305SEAC | 制造商:Toshiba America Electronic Components 功能描述:AC ADAPTER |
| AT-306 | 制造商:HRS 制造商全稱:HRS 功能描述:Fixed Attenuators (SMA Type) |
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