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參數(shù)資料
| 型號： | ASMCC0096-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | ASMCC0096-7 |
DS30379 Rev. 3 - 2
2 of 5
ASMCC0096
www.diodes.com
Electrical Characteristics, NPN Transistor Element @ TA = 25°C unless otherwise specified
Notes:
2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics, Zener Element
@ TA = 25
°C unless otherwise specified
Type
Number
Zener Voltage Range (Note 2)
Maximum Zener Impedance
Maximum Reverse
Leakage Current
VZ @ IZT
IZT
ZZT @IZT
ZZK @ IZK
= 0.5mA
IR
@VR
Nom (V)
Min (V)
Max (V)
mA
WmA
V
UDZ5V6B
5.6
5.49
5.73
5
60
200
1.0
2.5
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
40
70
100
60
30
300
IC = 100A, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
W
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
5.0
dB
VCE = 5.0V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
tr
35
ns
Storage Time
ts
200
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
tf
50
ns
@ TA = 25
°C unless otherwise specified
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