參數(shù)資料
型號(hào): ASM3P2821B
廠商: Alliance Semiconductor Corporation
英文描述: Low Power EMI Reduction IC
中文描述: 低功耗電磁干擾降低集成電路
文件頁數(shù): 3/7頁
文件大小: 174K
代理商: ASM3P2821B
ASM3P2821B
Absolute Maximum Ratings
Low Power EMI Reduction IC
3 of 7
Notice: The information in this document is subject to change without notice.
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to GND
-0.5 to + 7.0
V
TSTG
Storage temperature
-65 to +125
°C
TA
Operating temperature
0 to 70
°C
Note: These are stress ratings only and functional operation is not implied. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
DC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
V
IL
Input low voltage
GND – 0.3
-
TBD
V
V
IH
Input high voltage
TBD
-
V
DD
+ 0.3
V
I
IL
Input low current
TBD
μA
I
IH
Input high current
TBD
μA
V
OL
Output low voltage (V
DD
= 3.3V, I
OL
= 4mA)
TBD
V
V
OH
Output high voltage (V
DD
= 3.3V, I
OH
= 4mA)
TBD
V
I
CC
Dynamic supply current normal mode (3.3V and 10pF
loading)
TBD
mA
I
DD
Static supply current standby mode
TBD
μA
V
DD
Operating voltage
TBD
3.3
TBD
V
t
ON
Power up time (first locked clock cycle after power up)
-
TBD
-
mS
Z
OUT
Clock out impedance
-
TBD
-
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