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參數(shù)資料
| 型號： | ASJE1700R550SY-EL/S |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 263K |
| 代理商： | ASJE1700R550SY-EL/S |
SiC JFET
ASJE1700R550
ASJE1700R550
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
3
ADVANCED INFORMATION
Figure 1. Typical Output Characteristics
I
D = f(VDS); Tj = 25 °C; parameter: VGS
Figure 2. Typical Output Characteristics
I
D = f(VDS); Tj = 125 °C; parameter: VGS
0
1
2
3
4
5
6
7
8
9
02
46
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
3.0 V
2.5 V
2.0 V
1.5 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
02
46
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
3.0 V
2.5 V
2.0 V
1.5 V
Figure 3. Typical Output Characteristics
I
D = f(VDS); Tj = 175°C; parameter: VGS
Figure 4. Typical Transfer Characteristics
I
D = f(VGS); VDS = 5V
0
1
2
3
4
5
6
7
8
9
0.00
0.50
1.00
1.50
2.00
2.50
3.00
VGS, Gate-Source Voltage (V)
I D
,Drain-Source
Current
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
01
23
45
6
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
2.5 V
2.0 V
1.5 V
3.0 V
25
oC
125
oC
150
oC
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
02
46
8
10
ID, Drain Current (A)
R
DS(on)
,Drain-Source
On-resistance
(
)
25
oC
175
oC
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
1.5
2.0
2.5
3.0
VGS, Gate-Source Voltage (V)
I GS
,Gate-S
ource
Current
(A)
0.0
0.5
1.0
1.5
23
45
175
oC
25
oC
Figure 5. Gate-Source Current
I
GS = f(VGS); parameter: Tj
Figure 6. Drain-Source On-resistance
R
DS(on) = f(ID); VGS = 3.0; parameter: Tj
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| ASJE1700R550SY-EL | 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1700R550SY-EL/V | 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1700R550Y-EL/V | 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1700R550SY-EX | 4 A, 1700 V, 0.55 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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