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| 型號(hào)： | ASJE1200R100Y-EX |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.1 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 249K |
| 代理商： | ASJE1200R100Y-EX |
SiC JFET
ASJE1200R100
ASJE1200R100
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
5
ADVANCED INFORMATION
Figure 13. Switching Energy Losses
E
s = f(ID); VDS = 600V; VGD = +15V/-10V, RGEXT = 5ohm
Figure 14. Switching Energy Losses
Es = f(R
GEXT); VDS = 600V; ID = 12A, VGD = +15V/-10V
EON
EOFF
ETS
0
50
100
150
200
250
300
2
6
10
14
18
ID, Drain Current (A)
E,
Swit
ching
Energy
(
u
J)
EON
EOFF
ETS
0
100
200
300
400
500
600
0
1020
3040
RgEXT, External Gate Resistance, ( )
E,
Swit
ching
Energy
(
u
J)
Tj = 25
oC
Tj = 150
oC
Tj = 25
oC
Tj = 150
oC
Figure 15. Inductive Load Switching Circuit
Figure 18. Transient Thermal Impedance
Z
th(jc) = f(tP); parameter: Duty Ratio
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
tP, Pulse Width (s)
Z
th(jc)
,Transient
Thermal
Impedance
(°
C/
W)
0.5
0.3
0.1
0.05
0.02
0.01
single
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