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參數(shù)資料
| 型號(hào)： | ASJE1200R100SY-EL/V |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.1 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 249K |
| 代理商： | ASJE1200R100SY-EL/V |
SiC JFET
ASJE1200R100
ASJE1200R100
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
2
ADVANCED INFORMATION
Min
Typ
Max
Drain Source Blocking Voltage
BVDS
VGS = 0 V, ID = 600 A
1200
V
VDS = 1200 V, VGS = 0 V, Tj = 25
oC
100
600
VDS = 1200 V, VGS = 0 V, Tj = 175
oC
300
1000
VDS = 1200 V, VGS = 15 V,
Tj = 25
oC
1
VDS = 1200 V, VGS = 15 V,
Tj = 175
oC
10
VGS = 15 V, VDS = 0V
0.1
0.3
VGS = 15 V, VDS = 1200V
0.1
ID = 12 A, VGS = 3 V,
Tj = 25 °C
0.08
0.1
ID = 12 A, VGS = 3 V,
Tj = 125 °C
0.2
Gate Threshold Voltage
VGS(th)
VDS = 1 V, ID = 34 mA
1.15
1.4
1.75
V
Gate Forward Current
IGFWD
VGS = 3 V
220
mA
RG
f = 1 MHz, drain source shorted
8
RG(on)
VGS >2.7V; See Figure 5
0.5
Input Capacitance
Ciss
670
Output Capacitance
Coss
103
Reverse Transfer Capacitance
Crss
97
Effective Output Capacitance,
energy related
Co(er)
VDS = 0 V to 480 V,
VGS = 0 V
60
Turn On Delay
ton
10
Rise Time
tr
12
Turn Off Delay
toff
30
Fall Time
tf
25
Turn On Energy
Eon
70
Turn Off Energy
Eoff
100
Total Switching Energy
Ets
170
Turn On Delay
ton
10
Rise Time
tr
15
Turn Off Delay
toff
30
Fall Time
tf
25
Turn On Energy
Eon
85
Turn Off Energy
Eoff
100
Total Switching Energy
Ets
185
Total Gate Charge
Qg
30
Gate Source Charge
Qgs
1
Gate Drain Charge
Qgd
24
VDS = 600 V, ID = 12 A,
Inductive Load, TJ = 150
oC
Gate Driver = +15V, 10V,
RgEXT = 5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
VDS = 600 V, ID = 10 A,
VGS = + 2.5 V
ns
μJ
ns
μJ
nC
Dynamic Characteristics
VDD = 100 V
pF
Switching Characteristics
VDS = 600 V, ID = 12 A,
Inductive Load, TJ = 25
oC
Gate Driver = +15V, 10V,
RgEXT = 5ohm
See Figure 15 for typical gate drive /
inductive load switching circuit.
On Characteristics
Drain Source On resistance
Gate Resistance
RDS(on)
Total Drain Leakage Current
Total Gate Reverse Leakage
IDSS
IGSS
μA
mA
Off Characteristics
Value
Unit
Symbol
Parameter
Conditions
ELECTRICAL CHARACTERISTICS
相關(guān)PDF資料 |
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| ASJE1200R100SY-EL/S | 17 A, 1200 V, 0.1 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R100SY-EX/V | 17 A, 1200 V, 0.1 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R100Y-EX/V | 17 A, 1200 V, 0.1 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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