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參數(shù)資料
| 型號： | ASJD1200R085Y-EX/V |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 1200 V, 0.085 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 240K |
| 代理商： | ASJD1200R085Y-EX/V |
SiC JFET
ASJD1200R085
ASJD1200R085
Rev. 0.0 11/10
Micross Components reserves the right to change products or specications without notice.
3
ADVANCED INFORMATION
Figure 1. Typical Output Characteristics
I
D = f(VDS); Tj = 25°C; parameter: VGS
Figure 2. Typical Output Characteristics
I
D = f(VDS); Tj = 100°C; parameter: VGS
0
10
20
30
40
50
60
70
0246
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
10V
0.0 V
20V
-1.0 V
-2.0 V
0
5
10
15
20
25
30
35
40
45
02
46
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
2.0 V
1.0 V
0.0 V
-1.0 V
-2.0 V
Figure 3. Typical Output Characteristics
I
D = f(VDS); Tj = 150°C; parameter: VGS
Figure 4. Typical Transfer Characteristics
I
D = f(VGS); VDS = 5V
0
10
20
30
40
50
60
70
-4.00
-2.00
0.00
2.00
VGS, Gate-Source Voltage (V)
I D
,Drain-Source
Current
(A)
0
5
10
15
20
25
30
35
012
3456
VDS, Drain-Source Voltage (V)
I D
,Drain-Source
Current
(A)
0.0
2.0 V
-1.0 V
1.0 V
-2.0 V
25
oC
100
oC
150
oC
0.01
0.10
1.00
0
2040
6080
ID, Drain Current (A)
R
DS(on)
,Drain-Source
On-resistance
(
)
25
oC
150
oC
0.00
0.10
0.20
0.30
0.40
0.50
1.5
2.0
2.5
3.0
VGS, Gate-Source Voltage (V)
I GS
,Gate-Source
C
u
rrent
(A
)
0
2
4
6
8
23
456
150
oC
25
oC
Figure 5. Gate-Source Current
I
GS = f(VGS); parameter: Tj
Figure 6. Drain-Source On-resistance
R
DS(on) = f(ID); VGS = 2.0; parameter: Tj
相關(guān)PDF資料 |
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| ASJE1200R063Y-EX/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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| ASJE1200R063SY-EX/V | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063Y-EX | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EX | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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