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參數(shù)資料
| 型號： | ASIBFW13 |
| 廠商： | Advanced Semiconductor, Inc. |
| 英文描述： | N-CHANNEL SILICON FET DEPLETION MODE |
| 中文描述： | N溝道場效應(yīng)管耗盡型硅 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | ASIBFW13 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
GS
= 10 V
T
C
= 150
O
C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
pA
nA
I
GS
100
100
1.5
I
DSS
V
GS
V
(P)GS
Iy
fs
I
Iy
os
I
Iy
fs
I
Iy
os
I
C
iss
C
rs
V
n
V
DS
= 15 V V
GS
= 0 V
0.2
mA
V
V
DS
= 15 V
V
DS
= 15 V I
D
= 500 pA
I
D
= 50
μ
A
0.1
1.0
1.2
V
V
DS
= 15 V V
GS
= 0 V
1500
10
μ
S
V
DS
= 15 V I
D
= 200
μ
A f = 1.0 MHz
500
5.0
μ
S
V
DS
= 15 V f = 1.0 MHz
5.0
0.8
pF
V
DS
= 15 V I
D
= 200
μ
A BW = 0.6 to 100 Hz
500
nV
N-CHANNEL SILICON FET
DEPLETION MODE
BFW13
DESCRIPTION:
The
ASI BFW13
is Designed for Low
Noise Video Amplifier Applications
.
MAXIMUM RATINGS
I
D
10 mA
I
G
5.0 mA
V
DS
30 V
V
DG
30 V
V
GS
30 V
P
tot
150 mW @ T
A
= 110
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
590
O
C/W
T
J
T
STG
θ
JA
PACKAGE STYLE TO- 72
Order code:
ASI10832
1 = SOURCE 2 = DRAIN
3 = GATE 4 = SHIELD
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