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參數(shù)資料
| 型號(hào)： | ASI10790 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | ASI10790 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 200 mA
65
V
BVCEO
IC = 200 mA
35
V
BVEBO
IE = 10 Ma
4.0
V
ICES
VCE = 30 V
5.0
mA
ICBO
VCB = 30 V
30
mA
hFE
VCE = 5.0 V
IC = 500 mA
5.0
---
COB
VCE = 28 V
f = 1.0 MHz
130
pF
PG
ηηηη
C
VCC = 28 V
POUT = 100 W
f = 150 MHz
6.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
2N6166
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10790
DESCRIPTION:
The
ASI 2N6166 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 200
MHz.
FEATURES:
η
C = 60 % min. @ 100 W/150 MHz
P
G = 6.0 dB min. @ 100 W/150 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
9.0 A
VCBO
65 V
VEBO
4.0 V
PDISS
117 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
1.5 °C/W
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
C
B
E
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