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參數(shù)資料
| 型號(hào)： | ASI10747 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | ASI10747 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 100 mA
BV
CEO
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
20
UNITS
V
V
V
V
mA
---
15
---
C
OB
V
CB
= 12.5 V f = 1.0
MHz
400
pF
P
G
η
C
V
CE
= 12.5 V P
OUT
= 100 W f = 88 MHz
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VMB100-12
DESCRIPTION:
The
ASI VMB100-12
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
20 A
36 V
18 V
4.0 V
270 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.65
O
C/W
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10747
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.220 / 5.59
.007 / 0.18
.510 / 12.95
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
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|---|---|
| ASI10748 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| ASI10770 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10784 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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