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參數(shù)資料
| 型號(hào)： | ASI10740 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | PTCE 2C 2#20 SKT PLUG |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | ASI10740 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 100 mA
BVCEO
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 12.5 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
20
UNITS
V
V
V
V
mA
---
15
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
400
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 100 W f = 50 MHz
7.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VLB100-12
DESCRIPTION:
The
ASI VLB100-12
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
20 A
V
CBO
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
270 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.65
O
C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10740
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ASI10741 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10742 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10743 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10744 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10745 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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