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參數(shù)資料
| 型號： | ASI10548 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | ASI10548 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CER
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
BE
= 50 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
60
4.0
10
UNITS
V
V
V
mA
---
R
BE
= 10
5
100
P
G
η
C
V
Cc
= 50 V P
OUT
= 150 W f = 960 - 1215 MHz
7.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
AJT150
DESCRIPTION:
The
ASI AJT150
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
0.57
O
C/W
PACKAGE STYLE .400 2L FLG (A)
ORDER CODE: ASI10548
MINIMUM
inches / mm
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.120 / 3.05
.130 / 3.30
.396 / 10.06
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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| ASI10549 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| ASI10552 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| ASI10553 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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