參數(shù)資料
型號(hào): ASI10495
廠商: ADVANCED SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: FM-4
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 18K
代理商: ASI10495
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVDSS
ID = 100 mA
65
V
IDSS
VDS = 28 V
VGS = 0 V
5.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
A
VGS(th)
VDS = 10 V
ID = 100 mA
1.0
5.0
V
gfs
VDS = 10 V
ID = 5.0 A
3,500
mS
Ciss
Coss
Crss
VDS = 50 V
VGS = 0 V
f = 1.0 MHz
380
190
25
pF
PG
ηηηη
D
VDD = 28 V
IDQ = 2 x 250 mA
Pout = 300 W
f = 225 MHz
10
50
11
55
dB
%
ψ
VSWR = 5:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
BLF248
PACKAGE STYLE .400 BAL FLG(D)
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
ORDER CODE: ASI10495
DESCRIPTION:
The
ASI BLF248 is a Balanced
N-Channel Enhancement-Mode
RF Power MOSFET Designed for AM
and FM Power Amplifier Applications
up to 250 MHz.
FEATURES INCLUDE:
PG = 11 dB Typical at 225 MHz
5:1 Load VSWR Capability
Omnigold metalization system
MAXIMUM RATINGS
ID
40 A
VDSS
65 V
VGS
±40 V
PDISS
500 W @ TC = 25
OC
TJ
-65
OC to +150 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
0.35
OC/W
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