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參數資料
| 型號： | ASI10466 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | ER 3C 3#8 SKT RECP LINE |
| 中文描述： | 12 A, 55 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 20K |
| 代理商： | ASI10466 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 200 mA
BV
CEO
I
C
= 200 mA
BV
EBO
I
E
= 20 mA
I
CES
V
CE
= 50 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110
UNITS
V
55
V
4.0
V
10
mA
h
FE
V
CE
= 10 V
I
C
= 10 A
10
---
C
OB
V
CB
= 50 V
MHz
f = 1.0
330
pF
P
G
IMD
3
h
C
V
CE
= 50 V
P
OUT
= 220 W
(PEP)
I
CQ
= 150 mA f = 30 MHz
13
40
-30
dB
dBc
%
NPN RF POWER TRANSISTOR
HF220-50F
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10466
DESCRIPTION:
The
ASI
HF220-50F
is a Common
Emitter Device Designed for SSB
Transmitter Applications in the 2 to
30 MHz Band.
FEATURES INCLUDE:
·
P
G
= 13 dB min. @ 30 MHz
·
Gold Metallization
·
Emitter Ballasting
MAXIMUM RATINGS
I
C
12 A
V
CBO
110 V
P
DISS
320 W @ T
C
= 25
O
C
-55 to +200
O
C
-55 to +150
O
C
0.55
O
C/W
T
J
T
STG
q
JC
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