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參數(shù)資料
| 型號(hào)： | ASI1010 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 1.0A ,Vcc: 35 V)(NPN 硅型射頻功率晶體管,用于通用C級(jí)放大器,頻率達(dá)1500 MHz(Ic: 1.0A ,Vcc: 35 V)) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 INCH, HERMETIC SEALED, FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 18K |
| 代理商： | ASI1010 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 1.0 mA
BV
CER
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
45
3.5
15
UNITS
V
V
V
mA
---
R
BE
= 10
2.5
120
C
ob
V
CB
= 28 V
f = 1.0 MHz
10
pF
P
G
η
C
V
CC
= 28 V
P
OUT
= 10 W f = 1.0 GHz
12
50
dB
%
NPN SILICON RF POWER TRANSISTOR
ASI1010
DESCRIPTION:
The
ASI 1010
is Designed for General
Purpose Class C Power Amplifier
Applications up to 1500 MHz.
FEATURES:
P
G
= 12 dB min. at 10 W/ 1,000 MHz
Hermetic Microstrip Package
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
1.0 A
V
CC
35 V
P
DISS
29 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +200
O
C
θ
JC
8.5
O
C/W
PACKAGE STYLE .250 2L FLG
ORDER CODE: ASI10525
MINIMUM
inches / mm
.740 / 18.80
.245 / 6.22
.128 / 3.25
.028 / 0.71
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.032 / 0.81
.117 / 2.97
.132 / 3.35
.117 / 2.97
H
I
.560 / 14.22
.790 / 20.07
.570 / 14.48
.810 / 20.57
DIM
K
L
M
J
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
L
G
I
J K
F
B
E
C
D
A
N
M
P
.060 x 45°
P
N
.149 / 3.78
.187 / 4.75
.135 / 3.43
.119 / 3.02
.125 / 3.18
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