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參數(shù)資料
| 型號(hào)： | AS8F128K32Q-150/XT |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 128K x 32 FLASH FLASH MEMORY ARRAY |
| 中文描述： | 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 21/22頁(yè) |
| 文件大?。?/td> | 1260K |
| 代理商： | AS8F128K32Q-150/XT |
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FLASH
AS8F128K32
AS8F128K32
Rev. 2.7 09/07
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
Addr Data
8
Addr Data
8
Addr Data
8
Addr Data
8
Addr Data
8
Addr Data
8
1RA
RD
3
555
AA
2AA
55
555
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
XX00
1
Device ID
4
555
AA
2AA
55
555
90
XX01
20
555
2AA
555
00
555
2AA
555
01
4
555
AA
2AA
55
555
A0
PA
PD
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
90
(SA)
X02
Chip Erase
Sector Erase
Reset
5
Autoselect
6
Sector Protect Verify
7
Read
4
Program
FIFTH
SIXTH
4AA
55
BUS CYCLES
2,3
CYCLES
COMMAND SEQUENCE
1
FIRST
SECOND
THIRD
FOURTH
TABLE 4: Command Definitions (Applies to each device8)
LEGEND:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WEx\ or CEx\ pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WEx\ or CEx\ pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits A16–A14 uniquely select any sector.
FIGURE 2: Erase Operation
NOTE:
1. See the appropriate Command Definitions table for program command sequence.
2. See "
I/O3: Sector Erase Timer" for more information.
NOTES:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all command bus cycles are write operations.
4. No unlock or command cycles required when reading array data.
5. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high (while the device is
providing status data).
6. The fourth cycle of the autoselect command sequence is a read operation.
7. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.
8. Data shown for each respective byte I/O31-I/O24, I/O25-I/O16, I/O15-I/O8, I/O7-I/O0.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS8F128K32Q1-60/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-70/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS8F128K32Q1-60/883C | 制造商:AUSTIN 制造商全稱(chēng):Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-60/IT | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/Q | 制造商:Micross Components 功能描述:FLASH-MCM,4 MB - Trays |
| AS8F128K32Q1-60/XT | 制造商:AUSTIN 制造商全稱(chēng):Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q1-70/883C | 制造商:AUSTIN 制造商全稱(chēng):Austin Semiconductor 功能描述:128K x 32 FLASH FLASH MEMORY ARRAY |
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