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參數(shù)資料
| 型號(hào)： | AS7C3513B-10TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | Octal Buffer/Driver With 3-State Outputs 20-SSOP -40 to 85 |
| 中文描述： | 32K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 18.40 X 10.20 MM, TSOP2-44 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | AS7C3513B-10TC |
AS7C3513B
3/24/04, v.1.2
Alliance Semiconductor
P. 7 of 10
AC test conditions
- Output load: see Figure B.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10 Not applicable.
11
All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
These parameters are specified with C
L
= 5pF, as in Figure B. Transition is measured
±
500mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE and OE are Low for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
350
C
13
320
D
out
GND
+3.3V
Figure B: 3.3V Output load
168
Thevenin equivalent:
D
out
+1.728V
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C3513B-10TCN | Octal Buffer/Driver With 3-State Outputs 20-SSOP -40 to 85 |
| AS7C3513B-10TI | 3.3V 32K x 16 CMOS SRAM |
| AS7C3513B-10TIN | Octal Buffer/Driver With 3-State Outputs 20-TVSOP -40 to 85 |
| AS7C3513B-12JC | Octal Buffer/Driver With 3-State Outputs 20-TVSOP -40 to 85 |
| AS7C3513B-12JCN | 3.3V 32K x 16 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C3513B-10TCNTR | 制造商:Alliance Memory Inc 功能描述:AS7C3513B Series 512-kbit (32 K x 16) 3.3 V 10 ns CMOS Static RAM - TSOP 11-44 |
| AS7C3513B-12JCN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 3.3V 12ns FAST 32K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3513B-12JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 3.3V 12ns FAST 32K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3513B-12TCN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 3.3V 12ns FAST 32K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3513B-12TCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512K 3.3V 12ns FAST 32K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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