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參數(shù)資料
| 型號(hào)： | AS7C34096A-20TCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 |
| 中文描述： | 512K X 8 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | AS7C34096A-20TCN |
AS7C34096A
8/17/04, v. 2.1
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE controlled)
10
AC test conditions
- Output load: see Figure B.
- Input pulse level: GND to 3.0V. See Figures A and B.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10 All write cycle timings are referenced from the last valid address to the first transitioning address.
11
C=30pF, except on High Z and Low Z parameters, where C=5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
.
t
CLZ
and t
CHZ
are specified with C
L
= 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CE and OE are LOW for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WZ
t
WC
t
AS
D
IN
t
WR
350
C
11
320
D
OUT
GND
+3.3V
Figure B: 3.3V Output load
168
Thevenin equivalent:
D
OUT
+1.728V
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C34096A-20TI | DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 |
| AS7C34096A-20TIN | DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 |
| AS7C34096A-10JC | 3.3V 512K x 8 CMOS SRAM |
| AS7C34096A-10JCN | 3.3V 512K x 8 CMOS SRAM |
| AS7C34096A-10JI | 3.3V 512K x 8 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C34096A-20TCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 20ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C34096A-20TIN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 20ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C34096A-20TINTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M, 3.3V, 20ns, FAST 512K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C34096A-8TIN | 制造商:Alliance Memory Inc 功能描述:512K X 8 - Trays 制造商:Alliance Memory Inc 功能描述:IC SRAM 512K X 8 5.0V 36-SOJ |
| AS7C34096A-8TINTR | 制造商:Alliance Memory Inc 功能描述:512K X 8 - Tape and Reel 制造商:Alliance Memory Inc 功能描述:IC SRAM 4M 512X8 36-SOJ |
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