參數資料
型號: AS7C3364NTF32B-10TQIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD
中文描述: 64K X 32 ZBT SRAM, 10 ns, PQFP100
封裝: LEAD FREE, 14 X 20 MM, TQFP-100
文件頁數: 1/19頁
文件大?。?/td> 418K
代理商: AS7C3364NTF32B-10TQIN
April 2005
Copyright Alliance Semiconductor. All rights reserved.
AS7C3364NTF32B
AS7C3364NTF36B
4/28/05, v 1.0
Alliance Semiconductor
P. 1 of 19
3.3V 64K × 32/36 Flowthrough Synchronous SRAM with NTD
TM
Features
Organization: 65,536 words × 32 or 36 bits
NTD
architecture for efficient bus operation
Fast clock to data access: 7.5/8.0/10.0 ns
Fast OE access time:
3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
Selection guide
-75
-80
-10
Units
Minimum cycle time
Maximum clock access time
8.5
7.5
10
8.0
12
10
ns
ns
Maximum operating current
260
230
200
mA
Maximum standby current
Maximum CMOS standby current (DC)
110
30
100
30
90
30
mA
mA
W
register
Burst logic
D
Q
CLK
Output
Buffer
DQ[a,b,c,d]
16
16
CLK
CEN
CE0
CE1
CE2
A[15:0]
OE
Control
logic
CLK
Data
Input
Register
D
Q
CLK
32/36
32/36
OE
64K x 32/36
SRAM
Array
R/W
BWa
DQ[a,b,c,d]
BWb
BWc
BWd
CLK
Q
D
ADV / LD
LBO
addr. registers
Write delay
16
ZZ
CLK
32/36
32/36
32/36
32/36
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AS7C3364NTF32B-75TQI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD
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AS7C3364NTF32B-80TQC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD