參數(shù)資料
型號(hào): AS7C3364NTD36B-200TQC
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: SRAM
英文描述: 64K X 36 ZBT SRAM, 3 ns, PQFP100
封裝: 14 X 20 MM, TQFP-100
文件頁數(shù): 19/19頁
文件大?。?/td> 437K
代理商: AS7C3364NTD36B-200TQC
AS7C3364NTD32B
AS7C3364NTD36B
4/28/05; v.1.3
Alliance Semiconductor
P. 9 of 19
Snooze Mode Electrical Characteristics
Timing characteristics over operating range
Parameter
Sym
-200
-166
-133
Unit
Notes1
1 See “Notes” on page 15.
Min
Max
Min
Max
Min
Max
Clock frequency
fMAX
200
-
166
-
133
MHz
Cycle time
tCYC
5
6
-
7.5
-
ns
Clock access time
tCD
3.0
-
3.5
-
4.0
ns
Output enable Low to data valid
tOE
3.0
-
3.5
-
4.0
ns
Clock High to output Low Z
tLZC
0
0
-
0
-
ns
2,3,4
Data output invalid from clock High
tOH
1.5–1.5
-
1.5
-
ns
4
Output enable Low to output Low Z
tLZOE
0
0
-
0
-
ns
2,3,4
Output enable High to output High Z
tHZOE
3.0
-
3.5
-
4.0
ns
2,3,4
Clock High to output High Z
tHZC
3.0
-
3.5
-
4.0
ns
2,3,4
Clock High to output High Z
tHZCN
1.5
-
1.5
-
2.0
ns
5
Clock High pulse width
tCH
2.0–2.4
-
2.5
-
ns
6
Clock Low pulse width
tCL
2.3–2.4
-
2.5
-
ns
6
Address setup to clock High
tAS
1.4–1.5
-
1.5
-
ns
7
Data setup to clock High
tDS
1.4–1.5
-
1.5
-
ns
7
Write setup to clock High
tWS
1.4–1.5
-
1.5
-
ns
7
Chip select setup to clock High
tCSS
1.4–1.5
-
1.5
-
ns
7
Clock enable setup to clock High
tCENS
1.4–1.5
-
1.5
-
ns
7
ADV/LD
setup to clock High
tADVS
1.4–1.5
-
1.5
-
ns
7
Address hold from clock High
tAH
0.4–0.5
-
0.5
-
ns
7
Data hold from clock High
tDH
0.4–0.5
-
0.5
-
ns
7
Write hold from clock High
tWH
0.4–0.5
-
0.5
-
ns
7
ADV/LD
hold from clock High
tADVH
0.4–0.5
-
0.5
-
ns
7
Clock enable hold from clock High
tCENH
0.4–0.5
-
0.5
-
ns
7
Chip select hold from clock High
tCSH
0.4–0.5
-
0.5
-
ns
7
Description
Conditions
Symbol
Min
Max
Units
Current during Snooze Mode
ZZ > VIH
ISB2
30
mA
ZZ active to input ignored
tPDS
2cycle
ZZ inactive to input sampled
tPUS
2cycle
ZZ active to SNOOZE current
tZZI
2cycle
ZZ inactive to exit SNOOZE current
tRZZI
0cycle
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